The report contains ten-year analysis with the following sections
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Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
power mos device | 49 | 2005 |
nanotube semiconductor devices | 26 | 2009 |
oxide terminated trench mosfet with three or four masks | 22 | 2010 |
wafer level packaging structure with large contact area and preparation method thereof | 20 | 2011 |
configuration and method to form mosfet devices with low resistance silicide gate and me… 🛈 | 18 | 2006 |
multi-die package | 18 | 2009 |
mosfet with integrated schottky diode | 16 | 2013 |
multi-layer lead frame package and method of fabrication | 16 | 2010 |
shielded gate trench (sgt) mosfet devices and manufacturing processes | 16 | 2006 |
lateral super junction device with high substrate-gate breakdown and built-in avalanche … 🛈 | 16 | 2009 |