The report contains ten-year analysis with the following sections
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avalanche technology | 524 |
yadav technology | 21 |
yadav technology | 8 |
avalanche technology | 29 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
non-volatile magnetic memory element with graded layer | 81 | 2006 |
memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a … 🛈 | 37 | 2010 |
shared transistor in a spin-torque transfer magnetic random access memory (sttmram) cell | 21 | 2009 |
magnetic random access memory with field compensating layer and multi-level cell | 20 | 2011 |
host-managed logical mass storage device using magnetic random access memory (mram) | 16 | 2012 |
high capacity low cost multi-state magnetic memory | 16 | 2006 |
spin-transfer torque magnetic random access memory with perpendicular magnetic anisotrop… 🛈 | 15 | 2010 |
magnetic random access memory with dynamic random access memory (dram)-like interface | 14 | 2011 |
solid state disk employing flash and magnetic random access memory (mram) | 14 | 2011 |
low-cost non-volatile flash-ram memory | 12 | 2006 |