The report contains ten-year analysis with the following sections
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maxpower semiconductor | 273 |
rohm company | 2 |
maxpower semiconductor inc. (us) | 2 |
maxpower semiconductor | 20 |
maxpower semiconductor | 23 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
semiconductor device | 36 | 2007 |
semiconductor device structures and related processes | 27 | 2008 |
vertical power mosfet including planar channel | 15 | 2014 |
vertical power transistor die with etched beveled edges for increasing breakdown voltage | 13 | 2015 |
mos-gated power devices, methods, and integrated circuits | 12 | 2008 |
lateral devices containing permanent charge | 12 | 2008 |
trench transistors and methods with low-voltage-drop shunt to body diode | 11 | 2012 |
power semiconductor devices, structures, and related methods | 10 | 2010 |
devices, components and methods combining trench field plates with immobile electrostati… 🛈 | 10 | 2010 |
power mosfet with recessed field plate | 7 | 2006 |