The report contains ten-year analysis with the following sections
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hynix semiconductor | 181 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
nonvolatile random access memory | 16 | 2013 |
write-erase endurance lifetime of memory storage devices | 16 | 2009 |
semiconductor device with gate stack structure | 15 | 2006 |
phase change memory device having multi-level and method of driving the same | 15 | 2009 |
semiconductor memory device having pads | 13 | 2008 |
3d variable resistance memory device and method of manufacturing the same | 13 | 2013 |
resistance change memory | 12 | 2013 |
semiconductor device with one-side-contact and method for fabricating the same | 12 | 2009 |
semiconductor device and method for manufacturing the same | 12 | 2010 |
semiconductor memory device | 12 | 2013 |