The report contains ten-year analysis with the following sections
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Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
emitting device with improved extraction | 24 | 2011 |
deep ultraviolet light emitting diode | 24 | 2010 |
fluid-based light guiding structure and fabrication thereof | 21 | 2014 |
patterned layer design for group iii nitride layer growth | 20 | 2011 |
light emitting device with dislocation bending structure | 19 | 2011 |
storage device including ultraviolet illumination | 18 | 2012 |
semiconductor material doping | 17 | 2009 |
emitting device with compositional and doping inhomogeneities in semiconductor layers | 17 | 2011 |
stress relieving semiconductor layer | 16 | 2013 |
light emitting diode with polarization control | 13 | 2011 |